Littelfuse, Inc. Igbt, Module, N-Ch, 600V, 72A; Continuous Collector Current Ixys Semiconductor MKI50-06A7

Description
IGBT, MODULE, N-CH, 600V, 72A; Continuous Collector Current:72A; Collector Emitter Saturation Voltage:1.9V; Power Dissipation:225W; Operating Temperature Max:150°C; IGBT Termination:Solder; Collector Emitter Voltage Max:600V RoHS Compliant: Yes
Description
IGBT, MODULE, N-CH, 600V, 72A; Continuous Collector Current:72A; Collector Emitter Saturation Voltage:1.9V; Power Dissipation:225W; Operating Temperature Max:150°C; IGBT Termination:Solder; Collector Emitter Voltage Max:600V RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The MKI 50-06 A7 is an IGBT module in an H-bridge configuration, rated for 600 V collector-emitter voltage and 72 A continuous collector current at 25°C. It features NPT IGBT technology with low saturation voltage, square RBSOA capability, and ultra-fast free-wheeling diodes. The module has a copper base plate and solderable pins for PCB mounting, with a thermal resistance from junction to case of 0.55 K/W per IGBT and 1.19 K/W per diode. Operating junction temperature ranges from -40°C to 125°C, with a storage temperature range of -40°C to 150°C. The package has a creepage and strike distance of 6 mm and weighs 180 g. It is designed for wave soldering and meets isolated voltage ratings of 2500 V~ at 50/60 Hz.

Datasheet Summary
Powered by GS/AI

The MKI 50-06 A7 is an IGBT module in an H-bridge configuration, rated for 600 V collector-emitter voltage and 72 A continuous collector current at 25°C. It features NPT IGBT technology with low saturation voltage, square RBSOA capability, and ultra-fast free-wheeling diodes. The module has a copper base plate and solderable pins for PCB mounting, with a thermal resistance from junction to case of 0.55 K/W per IGBT and 1.19 K/W per diode. Operating junction temperature ranges from -40°C to 125°C, with a storage temperature range of -40°C to 150°C. The package has a creepage and strike distance of 6 mm and weighs 180 g. It is designed for wave soldering and meets isolated voltage ratings of 2500 V~ at 50/60 Hz.

Suppliers

Company
Product
Description
Supplier Links
Igbt, Module, N-Ch, 600V, 72A; Continuous Collector Current Ixys Semiconductor - 34AC1920 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, Module, N-Ch, 600V, 72A; Continuous Collector Current Ixys Semiconductor
34AC1920
Igbt, Module, N-Ch, 600V, 72A; Continuous Collector Current Ixys Semiconductor 34AC1920
IGBT, MODULE, N-CH, 600V, 72A; Continuous Collector Current:72A; Collector Emitter Saturation Voltage:1.9V; Power Dissipation:225W; Operating Temperature Max:150°C; IGBT Termination:Solder; Collector Emitter Voltage Max:600V RoHS Compliant: Yes

IGBT, MODULE, N-CH, 600V, 72A; Continuous Collector Current:72A; Collector Emitter Saturation Voltage:1.9V; Power Dissipation:225W; Operating Temperature Max:150°C; IGBT Termination:Solder; Collector Emitter Voltage Max:600V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 34AC1920
Product Name Igbt, Module, N-Ch, 600V, 72A; Continuous Collector Current Ixys Semiconductor
PD 225000 milliwatts
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