Littelfuse, Inc. Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYH30N120B4

Description
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low gate drive requirements Low on-state voltages Vcesat Optimized for medium switching frequencies 10kHz up to 30kHz Positive thermal coefficient of Vcesat International standard packages
Description
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low gate drive requirements Low on-state voltages Vcesat Optimized for medium switching frequencies 10kHz up to 30kHz Positive thermal coefficient of Vcesat International standard packages
Datasheet
Datasheet Summary
Powered by GS/AI

The IXYH30N120B4 is a 1200V, 30A continuous collector current XPT Trench IGBT in a TO-247 package, designed for switching applications from 5 to 30 kHz. It has a maximum collector-emitter voltage of 1200 V, a collector current rating of 30 A at 110°C, and a saturation voltage of 2.1 V at 25°C and 25 A gate drive. The device features a positive thermal coefficient of Vce(sat), enabling safe parallel operation, and exhibits low gate charge and on-state losses. Thermal resistance is 0.30 °C/W from junction to case. It supports a junction temperature range of -55°C to 175°C and meets international standard packaging. The part is suitable for inverters, UPS, motor drives, SMPS, PFC circuits, battery chargers, and welding machines.

Datasheet Summary
Powered by GS/AI

The IXYH30N120B4 is a 1200V, 30A continuous collector current XPT Trench IGBT in a TO-247 package, designed for switching applications from 5 to 30 kHz. It has a maximum collector-emitter voltage of 1200 V, a collector current rating of 30 A at 110°C, and a saturation voltage of 2.1 V at 25°C and 25 A gate drive. The device features a positive thermal coefficient of Vce(sat), enabling safe parallel operation, and exhibits low gate charge and on-state losses. Thermal resistance is 0.30 °C/W from junction to case. It supports a junction temperature range of -55°C to 175°C and meets international standard packaging. The part is suitable for inverters, UPS, motor drives, SMPS, PFC circuits, battery chargers, and welding machines.

Suppliers

Company
Product
Description
Supplier Links
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXYH30N120B4 - Littelfuse, Inc.
Rosemont, IL, United States
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
IXYH30N120B4
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYH30N120B4
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low gate drive requirements Low on-state voltages Vcesat Optimized for medium switching frequencies 10kHz up to 30kHz Positive thermal coefficient of Vcesat International standard packages

Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low gate drive requirements Low on-state voltages Vcesat Optimized for medium switching frequencies 10kHz up to 30kHz Positive thermal coefficient of Vcesat International standard packages

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYH30N120B4
Product Name Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 1200 volts
Unlock Full Specs
to access all available technical data