Littelfuse, Inc. Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYX100N65B3D1 IXYX100N65B3D1

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
  • Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYX100N65B3D1 - IXYX100N65B3D1 - Littelfuse, Inc.
    Littelfuse, Inc.
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXYX100N65B3D1 is a 650V, 100A IGBT with an anti-parallel ultra-fast diode, optimized for 10-30kHz switching in applications such as power inverters, motor drives, and PFC circuits. It is packaged in the PLUS247 format, weighing 6g. The device has a collector-emitter saturation voltage of 1.53V to 1.85V at 70A and 15V gate drive, with a Junction-to-Case thermal resistance of 0.36°C/W. It features a square RBSOA, avalanche capability, and short-circuit endurance of 8μs at 150°C. The maximum junction temperature is 175°C, and the mounting force range is 20 to 120 N.

Datasheet Summary
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The IXYX100N65B3D1 is a 650V, 100A IGBT with an anti-parallel ultra-fast diode, optimized for 10-30kHz switching in applications such as power inverters, motor drives, and PFC circuits. It is packaged in the PLUS247 format, weighing 6g. The device has a collector-emitter saturation voltage of 1.53V to 1.85V at 70A and 15V gate drive, with a Junction-to-Case thermal resistance of 0.36°C/W. It features a square RBSOA, avalanche capability, and short-circuit endurance of 8μs at 150°C. The maximum junction temperature is 175°C, and the mounting force range is 20 to 120 N.

Suppliers

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Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYX100N65B3D1 - IXYX100N65B3D1 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYX100N65B3D1
IXYX100N65B3D1
Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYX100N65B3D1 IXYX100N65B3D1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYX100N65B3D1
Product Name Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYX100N65B3D1
VCES 650 volts
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