Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYK120N120C3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
  • 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYK120N120C3 - Littelfuse, Inc.
    Littelfuse, Inc.
  • Transistor, Igbt, 1.2Kv, 240A, To-264; Continuous Collector Current Littelfuse - 03AH2075 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
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Suppliers

Company
Product
Description
Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYK120N120C3 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYK120N120C3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYK120N120C3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
IGBT Transistor
279-IXYK120N120C3
IGBT Transistor 279-IXYK120N120C3
Insulated Gate Bipolar Transistor, Product overview: IXYK120N120C3 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXYK120N120C3 can be used for catalog matching and distributor lookup.

Insulated Gate Bipolar Transistor, Product overview: IXYK120N120C3 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXYK120N120C3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistor, Igbt, 1.2Kv, 240A, To-264; Continuous Collector Current Littelfuse - 03AH2075 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Igbt, 1.2Kv, 240A, To-264; Continuous Collector Current Littelfuse
03AH2075
Transistor, Igbt, 1.2Kv, 240A, To-264; Continuous Collector Current Littelfuse 03AH2075
TRANSISTOR, IGBT, 1.2KV, 240A, TO-264; Continuous Collector Current:240A; Collector Emitter Saturation Voltage:2.55V; Power Dissipation:1.5kW; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

TRANSISTOR, IGBT, 1.2KV, 240A, TO-264; Continuous Collector Current:240A; Collector Emitter Saturation Voltage:2.55V; Power Dissipation:1.5kW; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYK120N120C3 279-IXYK120N120C3 03AH2075
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IGBT Transistor Transistor, Igbt, 1.2Kv, 240A, To-264; Continuous Collector Current Littelfuse
VCES 1200 volts
VCE(on) 3.2 volts
IC(max) 240 amps
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