Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXX100N60C3H1

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXXX100N60C3H1 is a 600V IGBT in a TO-264 or PLUS247 package, designed for 20-60kHz switching applications such as power inverters, motor drives, and PFC circuits. It is rated for a continuous collector current of 100A at 90°C and a peak pulse current of 340A. The device has a collector-emitter saturation voltage of 1.68V to 2.20V at 70A and 15V gate drive, and features a square RBSOA, avalanche capability, and a reverse parallel ultra-fast diode with forward voltage up to 2.0V. Thermal resistance is 0.18°C/W from junction to case. Operating junction temperature ranges from -55°C to 150°C, with a maximum soldering temperature of 260°C for 10 seconds. The part is rated for 600V blocking voltage and is optimized for low gate drive requirements.

Datasheet Summary
Powered by GS/AI

The IXXX100N60C3H1 is a 600V IGBT in a TO-264 or PLUS247 package, designed for 20-60kHz switching applications such as power inverters, motor drives, and PFC circuits. It is rated for a continuous collector current of 100A at 90°C and a peak pulse current of 340A. The device has a collector-emitter saturation voltage of 1.68V to 2.20V at 70A and 15V gate drive, and features a square RBSOA, avalanche capability, and a reverse parallel ultra-fast diode with forward voltage up to 2.0V. Thermal resistance is 0.18°C/W from junction to case. Operating junction temperature ranges from -55°C to 150°C, with a maximum soldering temperature of 260°C for 10 seconds. The part is rated for 600V blocking voltage and is optimized for low gate drive requirements.

Suppliers

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXXX100N60C3H1 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXXX100N60C3H1
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXX100N60C3H1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXXX100N60C3H1
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 600 volts
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