Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYP20N65C3D1

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
  • 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYP20N65C3D1 - Littelfuse, Inc.
    Littelfuse, Inc.
  • Transistor, 650V, 50A, To-220Ab Rohs Compliant Littelfuse - 29AK0508 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
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Datasheet
Datasheet Summary
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The IXYP20N65C3D1 is a 650V IGBT with an integrated fast anti-parallel diode, designed for switching applications between 20kHz and 60kHz. It is packaged in a TO-220AB case with a maximum lead temperature of 260°C for 10 seconds. The device has a continuous collector current rating of 20A at 110°C and a peak pulse current of 105A. The collector-emitter saturation voltage is 2.50V at 20A and 15V gate-emitter voltage. It features a square RBSOA, avalanche capability, and short-circuit endurance with a clamped inductive load of up to 10μs. The thermal resistance from junction to case is 0.50°C/W. The part meets international standard package requirements and is rated for junction temperatures from -55°C to 175°C.

Datasheet Summary
Powered by GS/AI

The IXYP20N65C3D1 is a 650V IGBT with an integrated fast anti-parallel diode, designed for switching applications between 20kHz and 60kHz. It is packaged in a TO-220AB case with a maximum lead temperature of 260°C for 10 seconds. The device has a continuous collector current rating of 20A at 110°C and a peak pulse current of 105A. The collector-emitter saturation voltage is 2.50V at 20A and 15V gate-emitter voltage. It features a square RBSOA, avalanche capability, and short-circuit endurance with a clamped inductive load of up to 10μs. The thermal resistance from junction to case is 0.50°C/W. The part meets international standard package requirements and is rated for junction temperatures from -55°C to 175°C.

Suppliers

Company
Product
Description
Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYP20N65C3D1 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYP20N65C3D1
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYP20N65C3D1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
IGBT Transistor
279-IXYP20N65C3D1
IGBT Transistor 279-IXYP20N65C3D1
Insulated Gate Bipolar Transistor, Product overview: IXYP20N65C3D1 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXYP20N65C3D1 can be used for catalog matching and distributor lookup.

Insulated Gate Bipolar Transistor, Product overview: IXYP20N65C3D1 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXYP20N65C3D1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistor, 650V, 50A, To-220Ab Rohs Compliant Littelfuse - 29AK0508 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, 650V, 50A, To-220Ab Rohs Compliant Littelfuse
29AK0508
Transistor, 650V, 50A, To-220Ab Rohs Compliant Littelfuse 29AK0508
TRANSISTOR, 650V, 50A, TO-220AB ROHS COMPLIANT: YES

TRANSISTOR, 650V, 50A, TO-220AB ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Transistors
Product Number IXYP20N65C3D1 279-IXYP20N65C3D1 29AK0508
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IGBT Transistor Transistor, 650V, 50A, To-220Ab Rohs Compliant Littelfuse
VCES 650 volts
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