The LKK47-06C5 is a dual CoolMOS power MOSFET in an ISOPLUS264 package, designed for AC switching, power factor correction, and push-pull converters. Each MOSFET has a 600 V drain-source breakdown voltage, a maximum drain current of 47 A at 25°C, and a drain-source on-resistance of 45 mΩ at 10 V gate voltage. The device is avalanche-rated for unclamped inductive switching with an repetitive energy rating of 3 mJ at 11 A and 25°C. Thermal resistance from junction to case is 0.45 K/W, and the package supports 2500 V isolation between pins and the mounting tab. The silicon chip is mounted on a DCB substrate to reduce thermal resistance and enable high power density. The package is RoHS compliant with lead-free terminations and operates from -55°C to 150°C junction temperature.
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density High reliability (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate Fast CoolMOS™(1) power MOSFET 4th generation Enhanced total power density Low thermal resistance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | LKK47-06C5 |
| Product Name | 600V N-Channel Super Junction Power MOSFETs |
| Polarity | N-Channel |
