The IXYP10N65C3D1M is a 650V planar IGBT with an integrated fast anti-parallel diode, designed for 20-60kHz switching applications in power inverters, UPS, motor drives, and PFC circuits. It is packaged in an overmolded TO-220 case with an electrically isolated tab, rated for 2500V~ isolation. The device has a continuous collector current of 7A at 110°C and a peak current of 50A at 25°C for 1ms. The collector-emitter saturation voltage is 2.27V to 2.60V at 10A and 15V gate drive. Thermal resistance is 2.83°C/W from junction to case. The IGBT is avalanche rated, features square RBSOA, and has a maximum junction temperature of 175°C. It meets the RoHS standard and is designed for high power density and low gate drive requirements.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYP10N65C3D1M |
| Product Name | Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYP10N65C3D1M |
| VCES | 650 volts |
