The IXYX180N65A5 is a 650 V, 180 A continuous collector current, Gen5 XPT™ trench IGBT in a PLUS-247 package, with a maximum junction temperature of 175 °C. It features a collector-emitter saturation voltage of 1.35 V at 100 A and 15 V gate-emitter voltage, a total gate charge of 654 nC, and a turn-off fall time of 110 ns at 25 °C. The device has a thermal resistance from junction to case of 0.13 °C/W and a reverse biased safe operating area of 360 A under clamped inductive load conditions. It meets the AEC-Q200 qualification standard and is suitable for switching applications up to 5 kHz.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYX180N65A5 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
