The IXXH80N65B4D1 is a 650V IGBT with an integrated anti-parallel diode, designed for switching applications from 5 to 30 kHz. It is packaged in a TO-247 case, weighing 6 grams. The device supports a continuous collector current of 80 A at 110°C and a peak pulse current of 430 A. It has a collector-emitter saturation voltage of 1.65 V to 2.10 V at 80 A and 15 V gate-emitter voltage. The IGBT features a square RBSOA, short-circuit capability with a 10 µs SCSOA, and a thermal resistance from junction to case of 0.24 °C/W. The reverse diode has a forward voltage of 2.5 V at 50 A and a reverse recovery time of 140 ns. The part meets international standard package requirements and is rated for operational junction temperatures from -55 °C to 175 °C.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
IGBT PT 650V 180A TO-247AD
| Littelfuse, Inc. | DigiKey | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXXH80N65B4D1 | 1294-IXXH80N65B4D1-CHP |
| Product Name | Power Semiconductors & Control ICs - IGBTs - XPT - Series: Trench - IXXH80N65B4D1 | Single IGBTs |
| VCES | 650 volts | |
| VCE(on) | 2.1 volts | |
| IC(max) | 180 amps | |
| Package Type | TO-247; TO-247U | TO-247; TO-247-3 |
