Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYN150N60B3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXYN150N60B3 is a 600V XPT IGBT designed for 10-30kHz switching applications in power inverters, UPS, motor drives, and PFC circuits. It is packaged in an SOT-227B (miniBLOC) case with aluminium nitride isolation, weighs 30 g, and supports a maximum junction temperature of 175°C. The device has a continuous collector current rating of 140A at 110°C and a pulsed collector current limit of 750A. It features a maximum collector-emitter saturation voltage of 2.20V at 150°C, a clamped inductive switching time of 8μs, and an avalanche-rated square RBSOA up to 600V. Thermal resistance from junction to case is 0.18°C/W, and isolation voltage is rated at 2500V~. The part complies with international standard packaging and is suited for high-power density applications with low gate drive requirements.

Datasheet Summary
Powered by GS/AI

The IXYN150N60B3 is a 600V XPT IGBT designed for 10-30kHz switching applications in power inverters, UPS, motor drives, and PFC circuits. It is packaged in an SOT-227B (miniBLOC) case with aluminium nitride isolation, weighs 30 g, and supports a maximum junction temperature of 175°C. The device has a continuous collector current rating of 140A at 110°C and a pulsed collector current limit of 750A. It features a maximum collector-emitter saturation voltage of 2.20V at 150°C, a clamped inductive switching time of 8μs, and an avalanche-rated square RBSOA up to 600V. Thermal resistance from junction to case is 0.18°C/W, and isolation voltage is rated at 2500V~. The part complies with international standard packaging and is suited for high-power density applications with low gate drive requirements.

Suppliers

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYN150N60B3 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYN150N60B3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYN150N60B3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYN150N60B3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 600 volts
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