Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.Advantages: Hard-switching capabilities High power densities Low gate drive requirements Ease of replacement and availability of isolation package Low Vcesat, low Eon/Eoff, Optimized for low switching frequencies High surge current capability Square Reverse Bias Safe Operating Areas （RBSOA) Positive thermal coefficient of Vcesat
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.Advantages: Hard-switching capabilities High power densities Low gate drive requirements Ease of replacement and availability of isolation package Low Vcesat, low Eon/Eoff, Optimized for low switching frequencies High surge current capability Square Reverse Bias Safe Operating Areas （RBSOA) Positive thermal coefficient of Vcesat
