Littelfuse, Inc. Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYP35N65C5

Description
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.Advantages: Hard-switching capabilities High power densities Low gate drive requirements Ease of replacement and availability of isolation package Low Vcesat, low Eon/Eoff, Optimized for low switching frequencies High surge current capability Square Reverse Bias Safe Operating Areas （RBSOA) Positive thermal coefficient of Vcesat
  • Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXYP35N65C5 - Littelfuse, Inc.
    Littelfuse, Inc.
Description
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.Advantages: Hard-switching capabilities High power densities Low gate drive requirements Ease of replacement and availability of isolation package Low Vcesat, low Eon/Eoff, Optimized for low switching frequencies High surge current capability Square Reverse Bias Safe Operating Areas （RBSOA) Positive thermal coefficient of Vcesat
Datasheet
Datasheet Summary
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The IXYP35N65C5 is a 650 V, 35 A Gen5 XPT™ IGBT in a TO-220-3L package, designed for switching applications between 20 and 60 kHz. It has a collector-emitter saturation voltage of 2.0 V at 30 A and 15 V gate-emitter voltage, with a thermal resistance junction-to-case of 0.46 °C/W. The device supports a continuous collector current of 35 A at 110 °C and a pulsed collector current of 190 A at 25 °C for 1 ms. It features a square reverse biased safe operating area, positive thermal coefficient of V<sub>CE(sat)</sub>, and low gate drive requirements. The package dimensions are 12.70 to 14.73 mm in length, 9.65 to 10.67 mm in width, and 3.56 to 4.83 mm in height. The junction temperature range is -55 to 175 °C.

Datasheet Summary
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The IXYP35N65C5 is a 650 V, 35 A Gen5 XPT™ IGBT in a TO-220-3L package, designed for switching applications between 20 and 60 kHz. It has a collector-emitter saturation voltage of 2.0 V at 30 A and 15 V gate-emitter voltage, with a thermal resistance junction-to-case of 0.46 °C/W. The device supports a continuous collector current of 35 A at 110 °C and a pulsed collector current of 190 A at 25 °C for 1 ms. It features a square reverse biased safe operating area, positive thermal coefficient of V<sub>CE(sat)</sub>, and low gate drive requirements. The package dimensions are 12.70 to 14.73 mm in length, 9.65 to 10.67 mm in width, and 3.56 to 4.83 mm in height. The junction temperature range is -55 to 175 °C.

Suppliers

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Product
Description
Supplier Links
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXYP35N65C5 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
IXYP35N65C5
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYP35N65C5
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.Advantages: Hard-switching capabilities High power densities Low gate drive requirements Ease of replacement and availability of isolation package Low Vcesat, low Eon/Eoff, Optimized for low switching frequencies High surge current capability Square Reverse Bias Safe Operating Areas （RBSOA) Positive thermal coefficient of Vcesat

Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.Advantages: Hard-switching capabilities High power densities Low gate drive requirements Ease of replacement and availability of isolation package Low Vcesat, low Eon/Eoff, Optimized for low switching frequencies High surge current capability Square Reverse Bias Safe Operating Areas （RBSOA) Positive thermal coefficient of Vcesat

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYP35N65C5
Product Name Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 650 volts
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