Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXR100N60B3H1

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXXR100N60B3H1 is a 600V IGBT with a continuous collector current of 68A at 110°C and a collector-emitter saturation voltage of 1.80V at 70A and 15V gate drive. It features an ISOPLUS247 package, an isolated mounting surface, and an integrated ultra-fast anti-parallel diode. The device is rated for junction temperatures from -55°C to 150°C and supports switching frequencies of 10-30kHz. It has a square reverse-bias safe operating area, avalanche capability, and short-circuit ruggedness. Thermal resistance from junction to case is 0.31°C/W and from case to heat sink is 0.15°C/W. The package is rated for 2500V~ electrical isolation and meets UL 94 V-0 flammability requirements. Designed for applications including motor drives, SMPS, PFC circuits, and UPS systems.

Datasheet Summary
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The IXXR100N60B3H1 is a 600V IGBT with a continuous collector current of 68A at 110°C and a collector-emitter saturation voltage of 1.80V at 70A and 15V gate drive. It features an ISOPLUS247 package, an isolated mounting surface, and an integrated ultra-fast anti-parallel diode. The device is rated for junction temperatures from -55°C to 150°C and supports switching frequencies of 10-30kHz. It has a square reverse-bias safe operating area, avalanche capability, and short-circuit ruggedness. Thermal resistance from junction to case is 0.31°C/W and from case to heat sink is 0.15°C/W. The package is rated for 2500V~ electrical isolation and meets UL 94 V-0 flammability requirements. Designed for applications including motor drives, SMPS, PFC circuits, and UPS systems.

Suppliers

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Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXXR100N60B3H1 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXXR100N60B3H1
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXR100N60B3H1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXXR100N60B3H1
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 600 volts
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