The IXXN200N65A4 is a 650V XPT™ IGBT designed for 5-20 kHz switching applications, housed in a SOT-227B miniBLOC package weighing 30 g. It has a continuous collector current rating of 200 A at 110°C, a peak collector current of 1200 A for 1 ms, and a clamped inductive switching capability of 400 A with a 10 µs short-circuit safe operating area. The collector-emitter saturation voltage is 1.44 V to 1.80 V at 25°C and 1.15 V at 150°C. Thermal resistance from junction to case is 0.12 °C/W, and the device supports a junction temperature range of -55 °C to +175 °C. It features an integrated gate resistor of 4 ©, reverse-bias safe operating area, and 2500 V~ isolation voltage. The package uses aluminum nitride isolation and complies with RoHS standards.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 4th generation (GenX4™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXXN200N65A4 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
