Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYX300N65A3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
  • 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYX300N65A3 - Littelfuse, Inc.
    Littelfuse, Inc.
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXYX300N65A3 is a 650V IGBT in the PLUS247 package, rated for a continuous collector current of 300A at 110°C and a peak pulse current of 1460A. It features a typical collector-emitter saturation voltage of 1.60V at 100A and 15V gate-emitter voltage, with a maximum junction temperature of 175°C. The device supports square reverse-bias safe operating area (RBSOA) and short-circuit capability, with an RthJC thermal resistance of 0.065°C/W. It is avalanche rated and meets international standard package requirements.

Datasheet Summary
Powered by GS/AI

The IXYX300N65A3 is a 650V IGBT in the PLUS247 package, rated for a continuous collector current of 300A at 110°C and a peak pulse current of 1460A. It features a typical collector-emitter saturation voltage of 1.60V at 100A and 15V gate-emitter voltage, with a maximum junction temperature of 175°C. The device supports square reverse-bias safe operating area (RBSOA) and short-circuit capability, with an RthJC thermal resistance of 0.065°C/W. It is avalanche rated and meets international standard package requirements.

Suppliers

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYX300N65A3 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYX300N65A3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYX300N65A3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYX300N65A3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 650 volts
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