The IXYP20N120C4 is a 1200V, 20A silicon IGBT in a TO-220 package, designed for high-frequency switching applications between 20 and 50 kHz. It has a maximum collector-emitter voltage of 1200 V, a collector current rating of 20 A continuous and 120 A peak, and a maximum power dissipation of 375 W. The device features a typical collector-emitter saturation voltage of 2.5 V at 20 A and 15 V gate drive, with a thermal resistance from junction to case of 0.50 °C/W. Switching times are specified with a fall time of 58 ns and turn-off energy of 1.0 mJ. It has a positive thermal coefficient for Vce(sat), supports clamped inductive switching, and operates from -55°C to 175°C junction temperature. The TO-220 package weighs 3.0 g and has a mounting torque of 1.13 Nm.
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYP20N120C4 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1200 volts |
