Littelfuse, Inc. Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYN140N120A4

Description
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages
Description
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages
Datasheet
Datasheet Summary
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The IXYN140N120A4 is a 1200V XPT IGBT designed for high-power switching applications up to 5kHz, featuring a SOT-227B (miniBLOC) package weighing 30g. It has a continuous collector current rating of 140A at 110°C and a collector-emitter saturation voltage of 1.34V to 1.70V at 140A and 15V gate drive. The device supports a maximum junction temperature of 175°C, with thermal resistance from junction to case of 0.14°C/W and case to sink of 0.05°C/W. It includes a positive thermal coefficient of Vce(sat), 2500V~ isolation, and meets international standard package specifications. Switching losses and times are characterized for clamped inductive loads, with gate charge values of 420nC on and 68nC gate-emitter turn-on. The device is qualified for use in inverters, motor drives, UPS, PFC, and welding applications.

Datasheet Summary
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The IXYN140N120A4 is a 1200V XPT IGBT designed for high-power switching applications up to 5kHz, featuring a SOT-227B (miniBLOC) package weighing 30g. It has a continuous collector current rating of 140A at 110°C and a collector-emitter saturation voltage of 1.34V to 1.70V at 140A and 15V gate drive. The device supports a maximum junction temperature of 175°C, with thermal resistance from junction to case of 0.14°C/W and case to sink of 0.05°C/W. It includes a positive thermal coefficient of Vce(sat), 2500V~ isolation, and meets international standard package specifications. Switching losses and times are characterized for clamped inductive loads, with gate charge values of 420nC on and 68nC gate-emitter turn-on. The device is qualified for use in inverters, motor drives, UPS, PFC, and welding applications.

Suppliers

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Product
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Supplier Links
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXYN140N120A4 - Littelfuse, Inc.
Rosemont, IL, United States
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
IXYN140N120A4
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYN140N120A4
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages

Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYN140N120A4
Product Name Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 1200 volts
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