The IXYP20N65C3D1M is a 650V IGBT with an overmolded TO-220 package, designed for 20-60 kHz switching applications such as power inverters, motor drives, and PFC circuits. It has a continuous collector current of 9 A at 110°C and a pulsed collector current of 105 A at 25°C. The device features a low saturation voltage of 2.27 V to 2.50 V at 20 A and 15 V gate-emitter voltage, an anti-parallel fast diode with a forward voltage of 3.0 V at 10 A, and a thermal resistance from junction to case of 3.00 °C/W for the IGBT and 4.0 °C/W for the diode. It is rated for 2500 V~ electrical isolation, has a square RBSOA, and supports short-circuit operation for 10 μs. Operating junction temperature ranges from -55 °C to 175 °C. The device is avalanche-rated and requires low gate drive power.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYP20N65C3D1M |
| Product Name | Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYP20N65C3D1M |
| VCES | 650 volts |
