The IXYP10N65C3 is a 650V IGBT designed for switching applications in the 20-60kHz range, optimized for high power density and rugged operation in inverters, motor drives, UPS, and PFC circuits. It is packaged in a TO-220 case with a weight of 3g and a mounting torque specification of 1.13 Nm. The device has a continuous collector current rating of 10A at 110°C and a peak collector current of 54A at 25°C for 1ms. It features a collector-emitter saturation voltage of 2.50V at 10A and 15V gate-emitter voltage, and a thermal resistance from junction to case of 0.94°C/W. The IGBT is rated for a maximum junction temperature of 175°C, has a square RBSOA, avalanche capability, and a short-circuit withstand time of 8μs at VCE=360V. It meets international standard package requirements and has low gate drive requirements.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYP10N65C3 |
| Product Name | 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
