Littelfuse, Inc. Ignition IGBT, N-Channel, 18 A, 400 V LGD18N40ATH

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. This device is a significant enhancement to the standard DPAK ignition IGBT device, NGD15N41CLT4. This device offers higher Unclamped Inductive Switching (UIS) energy and lower Collector-Emitter Saturation Voltage, Vce(on). End Products: Automotive DPAK Package Offers Smaller Footprint and Increased Board Space New Design Increase Unclamped Inductive Switching (UIS) Energy per Area Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated Gate-Emitter ESD Protection Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor and Gate-Emitter Resistor Emitter Ballasting for Short-Circuit Protection