The LGD18N40ATH is a 400 V, 18 A N-channel ignition IGBT in a DPAK package, designed for high-voltage, high-current switching in applications such as ignition and direct fuel injection. It features integrated ESD protection, a low threshold voltage for direct logic-level interfacing, and an unclamped inductive switching energy of 400 mJ at 50 V and 25 °C junction temperature. The device supports a continuous collector current of 15 A and a pulsed current of 50 A, with a maximum junction temperature of 175 °C. Thermal resistance from junction to case is 1.3 °C/W. It is AEC-Q101 qualified.
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. This device is a significant enhancement to the standard DPAK ignition IGBT device, NGD15N41CLT4. This device offers higher Unclamped Inductive Switching (UIS) energy and lower Collector-Emitter Saturation Voltage, Vce(on). End Products: Automotive DPAK Package Offers Smaller Footprint and Increased Board Space New Design Increase Unclamped Inductive Switching (UIS) Energy per Area Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated Gate-Emitter ESD Protection Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor and Gate-Emitter Resistor Emitter Ballasting for Short-Circuit Protection
| Littelfuse, Inc. | DigiKey | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | LGD18N40ATH | 18-LGD18N40ATHTR-ND |
| Product Name | Ignition IGBT, N-Channel, 18 A, 400 V | Single IGBTs |
| VCE(on) | 1.8 volts |
