The IXXP12N65B4D1 is a 650 V IGBT with a 12 A continuous collector current, designed for 5-30 kHz switching applications in inverters, UPS, motor drives, and PFC circuits. It is packaged in a TO-220 case with a weight of 3 g and mounting torque of 1.13 Nm. The device features a collector-emitter saturation voltage of 1.95 V at 12 A and 15 V gate-emitter bias, a short-circuit capability of 10 μs under clamped inductive load, and an anti-parallel fast diode with a forward voltage of 1.9 V at 10 A. Thermal resistance from junction to case is 0.94 °C/W for the IGBT and 2.30 °C/W for the diode. It meets RoHS standards and supports junction temperatures from -55 °C to +175 °C. The IGBT exhibits a square RBSOA and is optimized for low gate drive requirements and high power density.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXXP12N65B4D1 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - XPT - Series: Trench - IXXP12N65B4D1 |
| VCES | 650 volts |
