The IXYK100N65C3D1 is a 650V IGBT with an integrated ultra-fast anti-parallel diode, designed for 20-60kHz switching in applications such as motor drives, UPS, and PFC circuits. It is packaged in a TO-264 case with dimensions of 20.80-21.34mm in height and 15.75-16.13mm in width, weighing 10g. The device has a continuous collector current rating of 100A at 110°C, a peak collector current of 420A, and a maximum collector-emitter voltage of 650V. It features a maximum junction temperature of 175°C, a thermal resistance from junction to case of 0.18°C/W, and is rated for square RBSOA, avalanche, and short-circuit conditions. The part meets RoHS compliance and is qualified to AEC-Q200 standards. Guard bands and typical switching characteristics (e.g., t<sub>RI</sub> = 42ns, t<sub>FI</sub> = 60ns at T<sub>J</sub> = 25°C) indicate optimization for hard-switching with low gate drive requirements and energy losses.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYK100N65C3D1 |
| Product Name | 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
