The IXYH16N170CV1 is a 1700 V XPT IGBT with a co-packed fast recovery diode, housed in a TO-247 AD package weighing 6 g. It has a continuous collector current rating of 16 A at 110°C and a peak collector current of 100 A for 1 ms. The collector-emitter saturation voltage is 3.2 V to 3.8 V at 16 A and 15 V gate-emitter voltage, rising to 4.4 V at 150°C. It supports a maximum junction temperature of 175°C and has a thermal resistance junction-to-case of 0.48 °C/W. The reverse diode has a forward voltage of 3.0 V to 3.3 V and a reverse recovery time of 150 ns at 150°C. The device is rated for 1.13 Nm mounting torque and meets RoHS requirements.
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYH16N170CV1 |
| Product Name | 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1700 volts |
