Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXH75N60B3D1

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
  • 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXXH75N60B3D1 - Littelfuse, Inc.
    Littelfuse, Inc.
Request a Quote
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IXXH75N60B3D1 is a 600V IGBT with an integrated anti-parallel ultra-fast diode, designed for switching applications between 5 and 30 kHz. It is packaged in a TO-247 AD case, weighing 6 grams. The device has a continuous collector current rating of 75 A at 110°C and a pulsed collector current of 300 A at 25°C. The collector-emitter saturation voltage is 1.85 V at 60 A and 15 V gate-emitter voltage. It supports clamped inductive switching with a safe operating area of 150 A and 360 V for 10 μs, and features avalanche ruggedness and short-circuit capability. The thermal resistance from junction to case is 0.20 °C/W for the IGBT and 0.9 °C/W for the diode. Operating junction temperature ranges from -55°C to 175°C.

Datasheet Summary
Powered by GS/AI

The IXXH75N60B3D1 is a 600V IGBT with an integrated anti-parallel ultra-fast diode, designed for switching applications between 5 and 30 kHz. It is packaged in a TO-247 AD case, weighing 6 grams. The device has a continuous collector current rating of 75 A at 110°C and a pulsed collector current of 300 A at 25°C. The collector-emitter saturation voltage is 1.85 V at 60 A and 15 V gate-emitter voltage. It supports clamped inductive switching with a safe operating area of 150 A and 360 V for 10 μs, and features avalanche ruggedness and short-circuit capability. The thermal resistance from junction to case is 0.20 °C/W for the IGBT and 0.9 °C/W for the diode. Operating junction temperature ranges from -55°C to 175°C.

Suppliers

Company
Product
Description
Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXXH75N60B3D1 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXXH75N60B3D1
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXH75N60B3D1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
IGBT Transistor
279-IXXH75N60B3D1
IGBT Transistor 279-IXXH75N60B3D1
Insulated Gate Bipolar Transistor, Product overview: IXXH75N60B3D1 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXXH75N60B3D1 can be used for catalog matching and distributor lookup.

Insulated Gate Bipolar Transistor, Product overview: IXXH75N60B3D1 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXXH75N60B3D1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXXH75N60B3D1 279-IXXH75N60B3D1
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IGBT Transistor
VCES 600 volts
Unlock Full Specs
to access all available technical data