Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYQ40N65B3D1

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
  • 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYQ40N65B3D1 - Littelfuse, Inc.
    Littelfuse, Inc.
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXYQ40N65B3D1 is a 650V IGBT in a TO-3P package, designed for 5-30kHz switching applications such as power inverters, motor drives, and PFC circuits. It has a continuous collector current rating of 40A at 110°C, a collector-emitter saturation voltage of 1.7V to 2.0V at 40A and 15V gate drive, and an anti-parallel fast diode with a forward voltage of 2.5V at 30A. The device features a square RBSOA, avalanche capability, and short circuit withstand time of 5μs at 150°C and 400V. Thermal resistance from junction to case is 0.25°C/W for the IGBT and 0.60°C/W for the diode. It is rated for operation from -55°C to 175°C and meets RoHS standards. Weight is 5.5g.

Datasheet Summary
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The IXYQ40N65B3D1 is a 650V IGBT in a TO-3P package, designed for 5-30kHz switching applications such as power inverters, motor drives, and PFC circuits. It has a continuous collector current rating of 40A at 110°C, a collector-emitter saturation voltage of 1.7V to 2.0V at 40A and 15V gate drive, and an anti-parallel fast diode with a forward voltage of 2.5V at 30A. The device features a square RBSOA, avalanche capability, and short circuit withstand time of 5μs at 150°C and 400V. Thermal resistance from junction to case is 0.25°C/W for the IGBT and 0.60°C/W for the diode. It is rated for operation from -55°C to 175°C and meets RoHS standards. Weight is 5.5g.

Suppliers

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYQ40N65B3D1 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYQ40N65B3D1
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYQ40N65B3D1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYQ40N65B3D1
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 650 volts
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