The IXYT80N90C3 is a 900V IGBT designed for high-frequency switching applications up to 50 kHz, featuring low switching losses and a positive thermal coefficient of Vce(sat) for parallel operation. It is housed in a TO-268 package measuring 21.46 mm length by 16.26 mm width and weighs 4 g. The device handles a continuous collector current of 80 A at TC=25°C and a peak pulsed current of 360 A. It has a maximum junction temperature of 175°C and a thermal resistance from junction to case of 0.18°C/W. The IGBT meets square RBSOA specifications up to 900 V and complies with international standard packages. Switching times and energy losses are specified at 15 V gate drive under clamped inductive load conditions.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYT80N90C3 |
| Product Name | 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 900 volts |
