The IXYN200N65B5 is a 650 V, 200 A Gen5 XPT™ IGBT designed for medium-frequency switching applications between 5 and 30 kHz. It is packaged in an SOT-227B case with dimensions of 31.50-31.88 mm by 30.12-30.30 mm and weighs 30 g. The device features a collector-emitter saturation voltage of 1.45 V at 100 A and 15 V gate drive, a maximum junction temperature of 175 °C, and a thermal resistance from junction to case of 0.125 °C/W. It meets international standard package requirements and includes a square reverse-biased safe operating area. The IGBT has a positive thermal coefficient of VCE(sat) and supports high current densities with low gate drive requirements.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYN200N65B5 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
