Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYA20N120C3HV

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
  • 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYA20N120C3HV - Littelfuse, Inc.
    Littelfuse, Inc.
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXYA20N120C3HV is a 1200V XPT<sup>TM</sup> IGBT in a TO-263HV package, designed for high-frequency switching applications up to 50 kHz. It has a continuous collector current rating of 20A at 110°C and a peak pulse current of 96A at 25°C for 1ms. The device features a gate-emitter voltage rating of ±20V continuous and ±30V transient, with a collector-emitter saturation voltage of 3.4V at 20A and 15V gate drive. Thermal resistance from junction to case is 0.54°C/W, and it operates from -55°C to 175°C. The IGBT is avalanche rated, has a positive thermal coefficient of V<sub>CE(sat)</sub>, and meets square RBSOA requirements. It is RoHS compliant and compliant with international standard packages.

Datasheet Summary
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The IXYA20N120C3HV is a 1200V XPT<sup>TM</sup> IGBT in a TO-263HV package, designed for high-frequency switching applications up to 50 kHz. It has a continuous collector current rating of 20A at 110°C and a peak pulse current of 96A at 25°C for 1ms. The device features a gate-emitter voltage rating of ±20V continuous and ±30V transient, with a collector-emitter saturation voltage of 3.4V at 20A and 15V gate drive. Thermal resistance from junction to case is 0.54°C/W, and it operates from -55°C to 175°C. The IGBT is avalanche rated, has a positive thermal coefficient of V<sub>CE(sat)</sub>, and meets square RBSOA requirements. It is RoHS compliant and compliant with international standard packages.

Suppliers

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYA20N120C3HV - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYA20N120C3HV
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYA20N120C3HV
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYA20N120C3HV
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 1200 volts
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