The IXYN85N120C4H1 is a 1200 V, 85 A XPT Gen4 IGBT with an anti-parallel Sonic Diode, designed for high-frequency switching applications up to 50 kHz. It is packaged in a miniBLOC (SOT-227B) case with a baseplate, weighing 30 g. Interrupted by 2500 V isolation voltage, the device features a collector-emitter saturation voltage of 2.50 V at 85 A and 15 V gate drive, with a junction temperature range of -55 to 175 °C. Thermal resistance from junction to case is 0.25 °C/W, and case-to-heat sink is 0.15 °C/W. Switching times are 37 ns turn-off fall time and 60 ns turn-on rise time at 25 °C. It meets IEC 60286-3 for mounting torque and is rated for 170 A reverse biased safe operating area. The part is RoHS-compliant and designed for use in inverters, PFC circuits, UPS, battery chargers, motor drives, welding machines, and SMPS.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. These IGBTs have breakdown voltage from 650V till 1200V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYN85N120C4H1 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1200 volts |
