The IXYK85N120C4H1 is a 1200 V, 85 A trench IGBT with an integrated anti-parallel sonic diode, designed for high-frequency switching applications between 20 and 50 kHz. It is packaged in a TO-264 case with a collector tab and weighs 10 g. The device features a collector-emitter saturation voltage of 2.50 V at 85 A and 15 V gate drive, a turn-off fall time of 37 ns, and a thermal resistance from junction to case of 0.13 K/W for the IGBT and 0.16 K/W for the diode. It meets AEC-Q200 and RoHS standards. The IGBT has a positive thermal coefficient of VCE(sat) and is optimized for low switching losses and high power density in inverters, PFC circuits, UPS, battery chargers, motor drives, and welding machines.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. These IGBTs have breakdown voltage from 650V till 1200V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYK85N120C4H1 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1200 volts |
