Littelfuse, Inc. Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYX220N65A5

Description
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.Advantages: Hard-switching capabilities High power densities Low gate drive requirements Ease of replacement and availability of isolation package Low Vcesat, low Eon/Eoff, Optimized for low switching frequencies High surge current capability Square Reverse Bias Safe Operating Areas （RBSOA) Positive thermal coefficient of Vcesat
  • Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXYX220N65A5 - Littelfuse, Inc.
    Littelfuse, Inc.
Description
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.Advantages: Hard-switching capabilities High power densities Low gate drive requirements Ease of replacement and availability of isolation package Low Vcesat, low Eon/Eoff, Optimized for low switching frequencies High surge current capability Square Reverse Bias Safe Operating Areas （RBSOA) Positive thermal coefficient of Vcesat
Datasheet
Datasheet Summary
Powered by GS/AI

The IXYX220N65A5 is a 650 V, 220 A Gen5 XPT™ IGBT in a PLUS-247 package, designed for switching applications up to 5 kHz. It features a collector-emitter saturation voltage of 1.35 V at 100 A and 15 V gate-emitter voltage, a total gate charge of 750 nC, and a junction-to-case thermal resistance of 0.093 °C/W. The device supports a maximum junction temperature of 175 °C and a peak collector current of 1180 A for 1 ms. It has a square reverse-biased safe operating area and meets RoHS standards. The mounting force range is 20 to 120 N, and the device weighs 6 g.

Datasheet Summary
Powered by GS/AI

The IXYX220N65A5 is a 650 V, 220 A Gen5 XPT™ IGBT in a PLUS-247 package, designed for switching applications up to 5 kHz. It features a collector-emitter saturation voltage of 1.35 V at 100 A and 15 V gate-emitter voltage, a total gate charge of 750 nC, and a junction-to-case thermal resistance of 0.093 °C/W. The device supports a maximum junction temperature of 175 °C and a peak collector current of 1180 A for 1 ms. It has a square reverse-biased safe operating area and meets RoHS standards. The mounting force range is 20 to 120 N, and the device weighs 6 g.

Suppliers

Company
Product
Description
Supplier Links
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXYX220N65A5 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
IXYX220N65A5
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYX220N65A5
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.Advantages: Hard-switching capabilities High power densities Low gate drive requirements Ease of replacement and availability of isolation package Low Vcesat, low Eon/Eoff, Optimized for low switching frequencies High surge current capability Square Reverse Bias Safe Operating Areas （RBSOA) Positive thermal coefficient of Vcesat

Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.Advantages: Hard-switching capabilities High power densities Low gate drive requirements Ease of replacement and availability of isolation package Low Vcesat, low Eon/Eoff, Optimized for low switching frequencies High surge current capability Square Reverse Bias Safe Operating Areas （RBSOA) Positive thermal coefficient of Vcesat

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYX220N65A5
Product Name Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 650 volts
Unlock Full Specs
to access all available technical data