Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYP8N90C3D1

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXYP8N90C3D1 is a 900V XPT IGBT in a TO-220AB package, designed for high-frequency switching applications such as power inverters, UPS, motor drives, and PFC circuits. It has a continuous collector current rating of 8 A at 110°C and a collector-emitter saturation voltage of up to 3.0 V at 8 A and 15 V gate drive. The device features a square RBSOA, an ultra-fast anti-parallel diode with a reverse recovery time of 114 ns at 100°C, and a positive thermal coefficient of Vce(sat). The thermal resistance from junction to case is 0.50 °C/W. It is avalanche rated and suitable for clamped inductive load switching up to 900 V.

Datasheet Summary
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The IXYP8N90C3D1 is a 900V XPT IGBT in a TO-220AB package, designed for high-frequency switching applications such as power inverters, UPS, motor drives, and PFC circuits. It has a continuous collector current rating of 8 A at 110°C and a collector-emitter saturation voltage of up to 3.0 V at 8 A and 15 V gate drive. The device features a square RBSOA, an ultra-fast anti-parallel diode with a reverse recovery time of 114 ns at 100°C, and a positive thermal coefficient of Vce(sat). The thermal resistance from junction to case is 0.50 °C/W. It is avalanche rated and suitable for clamped inductive load switching up to 900 V.

Suppliers

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYP8N90C3D1 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYP8N90C3D1
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYP8N90C3D1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYP8N90C3D1
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 900 volts
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