Littelfuse, Inc. 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs IXYA12N250CHV

Description
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
Description
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
Datasheet
Datasheet Summary
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The IXYA12N250CHV is a 2500 V, 12 A XPT™ IGBT in a TO-263HV package, weighing 2.5 g, designed for high-voltage switch-mode and resonant-mode power supplies, uninterruptible power supplies, and capacitor discharge circuits. It has a maximum collector-emitter voltage of 2500 V, a continuous collector current of 12 A at 110°C, and a collector-emitter saturation voltage of 3.70 to 4.50 V at 12 A and 15 V gate drive. The device supports a peak collector current of 80 A for 1 ms and has a maximum junction temperature of 175°C. Thermal resistance from junction to case is 0.48 °C/W. Gate-emitter voltage ratings are ±20 V continuous and ±30 V transient. It features low gate drive requirement, high peak current capability, and low saturation voltage.

Datasheet Summary
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The IXYA12N250CHV is a 2500 V, 12 A XPT™ IGBT in a TO-263HV package, weighing 2.5 g, designed for high-voltage switch-mode and resonant-mode power supplies, uninterruptible power supplies, and capacitor discharge circuits. It has a maximum collector-emitter voltage of 2500 V, a continuous collector current of 12 A at 110°C, and a collector-emitter saturation voltage of 3.70 to 4.50 V at 12 A and 15 V gate drive. The device supports a peak collector current of 80 A for 1 ms and has a maximum junction temperature of 175°C. Thermal resistance from junction to case is 0.48 °C/W. Gate-emitter voltage ratings are ±20 V continuous and ±30 V transient. It features low gate drive requirement, high peak current capability, and low saturation voltage.

Suppliers

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1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs - IXYA12N250CHV - Littelfuse, Inc.
Rosemont, IL, United States
1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs
IXYA12N250CHV
1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs IXYA12N250CHV
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages

Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYA12N250CHV
Product Name 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 2500 volts
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