Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXN200N60C3H1

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
  • 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXXN200N60C3H1 - Littelfuse, Inc.
    Littelfuse, Inc.
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXXN200N60C3H1 is a 600V IGBT with an integrated anti-parallel sonic diode, designed for switching applications at 20-60 kHz. It is packaged in a SOT-227B miniBLOC case, weighing 30 g, with an isolated mounting surface and 2500 V~ electrical isolation. The device has a continuous collector current rating of 98 A at 110°C and a peak pulse current of 1000 A at 25°C. Collector-to-emitter saturation voltage is 1.60 V typ. at 100 A and 15 V gate-emitter voltage, rising to 1.93 V at 150°C. Turn-off switching time is 80 ns typ. Thermal resistance from junction to case is 0.16 °C/W. The IGBT is avalanche rated, has a square RBSOA, and supports short-circuit operation. It meets RoHS standards and is optimized for power inverters, UPS, motor drives, SMPS, PFC circuits, battery chargers, and welding machines.

Datasheet Summary
Powered by GS/AI

The IXXN200N60C3H1 is a 600V IGBT with an integrated anti-parallel sonic diode, designed for switching applications at 20-60 kHz. It is packaged in a SOT-227B miniBLOC case, weighing 30 g, with an isolated mounting surface and 2500 V~ electrical isolation. The device has a continuous collector current rating of 98 A at 110°C and a peak pulse current of 1000 A at 25°C. Collector-to-emitter saturation voltage is 1.60 V typ. at 100 A and 15 V gate-emitter voltage, rising to 1.93 V at 150°C. Turn-off switching time is 80 ns typ. Thermal resistance from junction to case is 0.16 °C/W. The IGBT is avalanche rated, has a square RBSOA, and supports short-circuit operation. It meets RoHS standards and is optimized for power inverters, UPS, motor drives, SMPS, PFC circuits, battery chargers, and welding machines.

Suppliers

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Product
Description
Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXXN200N60C3H1 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXXN200N60C3H1
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXN200N60C3H1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXXN200N60C3H1
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 600 volts
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