The IXXX100N75B4H1 is a 750 V, 100 A IGBT with a PLUS247 package, designed for switching applications in the 10-30 kHz range. It features a collector-emitter saturation voltage of 2.10 V at 100 A and 15 V gate drive, and a thermal resistance from junction to case of 0.17 °C/W. The device has a square reverse-bias safe operating area, a short-circuit withstand capability of 10 µs at 400 V and 20 Ω gate resistance, and a continuous collector current rating of 100 A at 110 °C. The integrated reverse diode has a forward voltage of 2.2 V at 100 A. The part meets IEC 60286-3 and RoHS standards, and is qualified to AEC-Q200. The package is a flat lead surface mount.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 4th generation (GenX4™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 750V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXXX100N75B4H1 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - XPT - Series: Trench - IXXX100N75B4H1 |
| VCES | 750 volts |
