The IXXP50N60B3 is a 600V IGBT in a TO-220 package designed for 5-30 kHz switching applications. It has a continuous collector current rating of 50 A at 110°C and a peak collector current of 200 A for 1 ms. The device features a maximum collector-emitter saturation voltage of 1.80 V at 36 A and 15 V gate drive, and a maximum power dissipation of 600 W at 25°C. Thermal resistance from junction to case is 0.50 °C/W. It supports a junction temperature range of -55°C to 175°C, with a maximum lead temperature for soldering of 300°C for 10 seconds. The IGBT has a square reverse-bias safe operating area, avalanche capability, and short-circuit endurance. It is rated for international standard packages and is suitable for applications including power inverters, UPS, motor drives, SMPS, PFC circuits, and welding machines.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXXP50N60B3 |
| Product Name | 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 600 volts |
