The IXYN180N65A5 is a 650 V, 180 A Gen5 XPT™ IGBT in a SOT-227B package, optimized for switching applications up to 5 kHz. It features a collector-emitter saturation voltage of 1.35 V at 100 A and 15 V gate-emitter voltage, a total gate charge of 654 nC, and a maximum junction temperature of 175 °C. The device has a thermal resistance from junction to case of 0.16 °C/W and case-to-heat sink of 0.05 °C/W. It supports a reverse-biased safe operating area (RBSOA) and is rated for a continuous collector current of 180 A at 110 °C. The package has an isolated baseplate and supports mounting torque of 1.5 Nm.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYN180N65A5 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
