Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYN120N120C3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXYN120N120C3 is a 1200V XPT IGBT designed for high-frequency switching applications up to 50 kHz in inverters, motor drives, and PFC circuits. It is packaged in a SOT-227B miniBLOC with a mounting torque of 1.5 Nm and weighs 30 g. The device has a continuous collector current rating of 120 A at 110°C, a peak collector current of 700 A for 1 ms, and a clamped inductive switching energy of 5.10 mJ at 25°C. It features a Vce(sat) of 3.20 V at 120 A and 15 V gate drive, a thermal resistance of 0.125 °C/W Junction-to-Case, and is rated for junction temperatures from -55°C to 175°C. The IGBT meets AEC-Q200 and RoHS standards, has square RBSOA, avalanche capability, and an isolation voltage of 2500 V~. The gate charge is 412 nC, with switching times of 96 ns fall time and 35 ns turn-on delay.

Datasheet Summary
Powered by GS/AI

The IXYN120N120C3 is a 1200V XPT IGBT designed for high-frequency switching applications up to 50 kHz in inverters, motor drives, and PFC circuits. It is packaged in a SOT-227B miniBLOC with a mounting torque of 1.5 Nm and weighs 30 g. The device has a continuous collector current rating of 120 A at 110°C, a peak collector current of 700 A for 1 ms, and a clamped inductive switching energy of 5.10 mJ at 25°C. It features a Vce(sat) of 3.20 V at 120 A and 15 V gate drive, a thermal resistance of 0.125 °C/W Junction-to-Case, and is rated for junction temperatures from -55°C to 175°C. The IGBT meets AEC-Q200 and RoHS standards, has square RBSOA, avalanche capability, and an isolation voltage of 2500 V~. The gate charge is 412 nC, with switching times of 96 ns fall time and 35 ns turn-on delay.

Suppliers

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Product
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Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYN120N120C3 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYN120N120C3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYN120N120C3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYN120N120C3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 1200 volts
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