The IXYA8N250CHV is a 2500 V XPT IGBT in a TO-263HV package, rated for a continuous collector current of 8 A at 110°C and a peak pulse current of 70 A. It has a typical collector-emitter saturation voltage of 3.35 V at 8 A and 15 V gate-emitter bias, and a maximum junction temperature of 175°C. The device exhibits a thermal resistance from junction to case of 0.53 °C/W and switching times of 86 ns turn-off delay and 12 ns rise time under specified conditions. It supports clamped inductive switching to 1500 V and meets standard high-voltage packaging requirements for switch-mode, resonant-mode, and UPS applications.
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYA8N250CHV |
| Product Name | 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 2500 volts |
