The IXXH110N65B4 is a 650V trench IGBT in a TO-247 package, designed for 10-30 kHz switching applications. It has a continuous collector current rating of 110 A at 110°C and a peak pulse current of 570 A for 1 ms. The device features a collector-emitter saturation voltage of 2.10 V at 110 A and 15 V gate drive, and a thermal resistance from junction to case of 0.17 °C/W. It supports a maximum junction temperature of 175 °C, has a square RBSOA, and exhibits 10 μs short-circuit capability. The package is an industry-standard TO-247 with a weight of 6 g and a mounting torque of 1.13 Nm. The part meets RoHS standards and is qualified under AEC-Q200.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXXH110N65B4 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
