Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYN100N120B3H1

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXYN100N120B3H1 is a 1200V XPT IGBT with an integrated ultra-fast anti-parallel diode, designed for 5-30 kHz switching in applications such as motor drives, UPS, and PFC circuits. It is packaged in an SOT-227B (miniBLOC) case and has a mounting torque specification of 1.5/13 Nm/lb.in. The device has a continuous collector current rating of 76 A at T_C = 110°C, a collector-emitter saturation voltage of 2.60 V at I_C = 100 A and V_GE = 15 V, and a maximum junction temperature of 150°C. It is rated for 2500 V~ isolation voltage and features a positive thermal coefficient of V_CE(sat). The IGBT is avalanche rated and meets the RoHS standard.

Datasheet Summary
Powered by GS/AI

The IXYN100N120B3H1 is a 1200V XPT IGBT with an integrated ultra-fast anti-parallel diode, designed for 5-30 kHz switching in applications such as motor drives, UPS, and PFC circuits. It is packaged in an SOT-227B (miniBLOC) case and has a mounting torque specification of 1.5/13 Nm/lb.in. The device has a continuous collector current rating of 76 A at T_C = 110°C, a collector-emitter saturation voltage of 2.60 V at I_C = 100 A and V_GE = 15 V, and a maximum junction temperature of 150°C. It is rated for 2500 V~ isolation voltage and features a positive thermal coefficient of V_CE(sat). The IGBT is avalanche rated and meets the RoHS standard.

Suppliers

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYN100N120B3H1 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYN100N120B3H1
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYN100N120B3H1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYN100N120B3H1
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 1200 volts
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