Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYH60N90C3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXYH60N90C3 is a 900V IGBT designed for high-frequency switching applications up to 50 kHz, such as power inverters, UPS, motor drives, and PFC circuits. It is packaged in a TO-247 AD case with dimensions of 20.80 to 21.46 mm in length and 15.75 to 16.26 mm in width. The device has a continuous collector current rating of 60 A at 110°C and a peak pulse current of 310 A at 25°C. It features a collector-emitter saturation voltage of 2.4 to 2.9 V at 60 A and 15 V gate bias, a gate-emitter threshold voltage of 3.5 to 5.5 V, and a thermal resistance from junction to case of 0.20 °C/W. The IGBT has a square reverse-bias safe operating area, a positive thermal coefficient of Vₓₑ(sat), and is rated for operating junction temperatures from -55 °C to 175 °C. It meets international standard package requirements and is qualified under AEC-Q200.

Datasheet Summary
Powered by GS/AI

The IXYH60N90C3 is a 900V IGBT designed for high-frequency switching applications up to 50 kHz, such as power inverters, UPS, motor drives, and PFC circuits. It is packaged in a TO-247 AD case with dimensions of 20.80 to 21.46 mm in length and 15.75 to 16.26 mm in width. The device has a continuous collector current rating of 60 A at 110°C and a peak pulse current of 310 A at 25°C. It features a collector-emitter saturation voltage of 2.4 to 2.9 V at 60 A and 15 V gate bias, a gate-emitter threshold voltage of 3.5 to 5.5 V, and a thermal resistance from junction to case of 0.20 °C/W. The IGBT has a square reverse-bias safe operating area, a positive thermal coefficient of Vₓₑ(sat), and is rated for operating junction temperatures from -55 °C to 175 °C. It meets international standard package requirements and is qualified under AEC-Q200.

Suppliers

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYH60N90C3 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYH60N90C3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYH60N90C3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYH60N90C3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 900 volts
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