Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYK140N90C3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
  • 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYK140N90C3 - Littelfuse, Inc.
    Littelfuse, Inc.
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXYK140N90C3 is a 900V, 140A IGBT in a TO-264 package, designed for high-frequency switching applications such as power inverters, motor drives, and PFC circuits. It features a maximum collector-emitter voltage of 900V, a collector current rating of 140A at 110°C, and a collector-emitter saturation voltage of 2.15V to 2.70V at 25°C. The device has a square RBSOA, avalanche capability, and a positive thermal coefficient for Vce(sat). Thermal resistance is 0.092°C/W from junction to case. It is rated for junction temperatures from -55°C to 175°C and meets international standard package requirements. Switching times are optimized for 20-50 kHz operation, with 105ns typical fall time and 145ns turn-off delay at 25°C.

Datasheet Summary
Powered by GS/AI

The IXYK140N90C3 is a 900V, 140A IGBT in a TO-264 package, designed for high-frequency switching applications such as power inverters, motor drives, and PFC circuits. It features a maximum collector-emitter voltage of 900V, a collector current rating of 140A at 110°C, and a collector-emitter saturation voltage of 2.15V to 2.70V at 25°C. The device has a square RBSOA, avalanche capability, and a positive thermal coefficient for Vce(sat). Thermal resistance is 0.092°C/W from junction to case. It is rated for junction temperatures from -55°C to 175°C and meets international standard package requirements. Switching times are optimized for 20-50 kHz operation, with 105ns typical fall time and 145ns turn-off delay at 25°C.

Suppliers

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYK140N90C3 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYK140N90C3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYK140N90C3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYK140N90C3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 900 volts
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