The IXYH24N170CV1 is a 1700 V XPT IGBT with a continuous collector current of 24 A at 110 °C and a peak collector current of 140 A for 1 ms. It is packaged in a TO-247 AD case with a weight of 6 g and a mounting torque of 1.13 Nm. The device has a collector-emitter saturation voltage of 3.5 V to 4.0 V at 25 °C and 5.0 V at 150 °C, with a thermal resistance from junction to case of 0.30 °C/W. It includes a co-packed fast recovery diode with a forward voltage of 2.6 V to 3.3 V and reverse recovery time of 195 ns at 150 °C. The IGBT operates with a junction temperature range of -55 °C to +175 °C and meets RoHS standards.
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYH24N170CV1 |
| Product Name | 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1700 volts |
