Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXX200N60C3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
  • 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXXX200N60C3 - Littelfuse, Inc.
    Littelfuse, Inc.
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Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
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Datasheet
Datasheet Summary
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The IXXX200N60C3 is a 600V IGBT designed for 20-60kHz switching applications, available in a PLUS247 package. It has a continuous collector current rating of 200A at 110°C and a peak pulse current of 900A at 25°C. The collector-emitter saturation voltage is typ. 2.1V at 100A and 15V gate-emitter voltage. Thermal resistance from junction to case is 0.092°C/W. The device features a square reverse-bias safe operating area, avalanche capability, and short-circuit withstand time of 10μs under specified conditions. It is rated for operation from -55°C to 175°C junction temperature and meets RoHS standards. The package dimensions are 20.80-21.34mm in length, 15.75-16.13mm in width, with a 5.45mm lead pitch.

Datasheet Summary
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The IXXX200N60C3 is a 600V IGBT designed for 20-60kHz switching applications, available in a PLUS247 package. It has a continuous collector current rating of 200A at 110°C and a peak pulse current of 900A at 25°C. The collector-emitter saturation voltage is typ. 2.1V at 100A and 15V gate-emitter voltage. Thermal resistance from junction to case is 0.092°C/W. The device features a square reverse-bias safe operating area, avalanche capability, and short-circuit withstand time of 10μs under specified conditions. It is rated for operation from -55°C to 175°C junction temperature and meets RoHS standards. The package dimensions are 20.80-21.34mm in length, 15.75-16.13mm in width, with a 5.45mm lead pitch.

Suppliers

Company
Product
Description
Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXXX200N60C3 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXXX200N60C3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXX200N60C3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
IGBT Transistor
279-IXXX200N60C3
IGBT Transistor 279-IXXX200N60C3
Insulated Gate Bipolar Transistor, Product overview: IXXX200N60C3 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXXX200N60C3 can be used for catalog matching and distributor lookup.

Insulated Gate Bipolar Transistor, Product overview: IXXX200N60C3 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXXX200N60C3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXXX200N60C3 279-IXXX200N60C3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IGBT Transistor
VCES 600 volts
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