Littelfuse, Inc. Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYP20N65B3D1 IXYP20N65B3D1

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
  • Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYP20N65B3D1 - IXYP20N65B3D1 - Littelfuse, Inc.
    Littelfuse, Inc.
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
Powered by GS/AI

The IXYP20N65B3D1 is a 650V IGBT with a 20A continuous collector current, designed for 5-30kHz switching applications in power inverters, UPS, motor drives, and PFC circuits. It is packaged in a TO-220 case, weighs 3.0 g, and has a mounting torque of 1.13 Nm. The device features an anti-parallel fast diode, square RBSOA, avalanche capability, and short circuit protection. Its collector-emitter saturation voltage is 2.10V at 25°C, and it supports a maximum junction temperature of 175°C. Thermal resistance from junction to case is 0.65°C/W for the IGBT and 1.85°C/W for the diode. The part meets international standard packaging requirements and is rated for -55°C to 175°C operating temperature. Switching times and energy losses vary with clamping voltage, junction temperature, and gate resistance.

Datasheet Summary
Powered by GS/AI

The IXYP20N65B3D1 is a 650V IGBT with a 20A continuous collector current, designed for 5-30kHz switching applications in power inverters, UPS, motor drives, and PFC circuits. It is packaged in a TO-220 case, weighs 3.0 g, and has a mounting torque of 1.13 Nm. The device features an anti-parallel fast diode, square RBSOA, avalanche capability, and short circuit protection. Its collector-emitter saturation voltage is 2.10V at 25°C, and it supports a maximum junction temperature of 175°C. Thermal resistance from junction to case is 0.65°C/W for the IGBT and 1.85°C/W for the diode. The part meets international standard packaging requirements and is rated for -55°C to 175°C operating temperature. Switching times and energy losses vary with clamping voltage, junction temperature, and gate resistance.

Suppliers

Company
Product
Description
Supplier Links
Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYP20N65B3D1 - IXYP20N65B3D1 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYP20N65B3D1
IXYP20N65B3D1
Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYP20N65B3D1 IXYP20N65B3D1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYP20N65B3D1
Product Name Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYP20N65B3D1
VCES 650 volts
Unlock Full Specs
to access all available technical data