The IXYH30N120A4 is a 1200V IGBT in a TO-247 package, designed for high-power switching applications up to 5kHz. It has a continuous collector current of 30A at 110°C and a peak collector current of 184A for 1ms. The collector-emitter saturation voltage is 1.9V at 25°C and remains 1.9V at 150°C under 25A collector current. Thermal resistance from junction to case is 0.21°C/W. The device features a positive temperature coefficient of Vce(sat), enabling easy paralleling, and meets international standard package requirements. Gate drive requirements are low, with a maximum gate-emitter voltage of ±20V continuous and ±30V transient. Maximum junction temperature is 175°C.
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYH30N120A4 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1200 volts |
