The IXXA50N60B3 is a 600V IGBT in a TO-263 package, designed for 5-30 kHz switching applications. It has a continuous collector current rating of 50A at 110°C and a peak pulse current of 200A. The device features a maximum collector-emitter saturation voltage of 1.80V at 36A and 15V gate drive, with a thermal resistance from junction to case of 0.25 °C/W. It supports square RBSOA, avalanche capability, and short circuit protection up to 10 µs. The junction temperature range is -55 °C to 175 °C, and it meets international standard package dimensions. The IXXA50N60B3 is rated for 175 °C operation and is optimized for high power density, low gate drive requirements, and easy paralleling.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXXA50N60B3 |
| Product Name | 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 600 volts |
