Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
TRANSISTOR, IGBT, 1.7KV, 100A, PLUS247; Continuous Collector Current:100A; Collector Emitter Saturation Voltage:3.5V; Power Dissipation:937W; Collector Emitter Voltage Max:1.7kV; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
| Littelfuse, Inc. | RS Components, Ltd. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYX30N170CV1 | 1464254 | 03AH2130 |
| Product Name | 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs | IGBTs | Transistor, Igbt, 1.7Kv, 100A, Plus247; Continuous Collector Current Littelfuse |
| VCES | 1700 volts | ||
| VCE(on) | 4 volts | ||
| IC(max) | 100 amps | ||
| Package Type | TO-247; TO-247 PLUS | Plus247 | TO-3 |
