The IXYP20N120A4 is a 1200V, 20A continuous IGBT in a TO-220 package, designed for high-power switching applications up to 5kHz. It features a maximum collector-emitter voltage of 1200V, a collector current rating of 20A at 110°C, and a typical saturated voltage of 1.90V at 20A and 15V gate drive. The device has a thermal resistance of 0.50 °C/W from case to sink and operates with a junction temperature range of -55°C to 175°C. It exhibits a positive thermal coefficient for Vce(sat), enabling parallel operation, and meets international standard package requirements. The IGBT is qualified for use in power inverters, UPS, motor drives, SMPS, battery chargers, welding machines, and lamp ballasts.
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYP20N120A4 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1200 volts |
